Aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition

Heli Seppänen, Iurii Kim, Jarkko Etula, Evgeniy Ubyivovk, Alexei Bouravleuv, Harri Lipsanen

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<l100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

LanguageEnglish
Article number406
JournalMaterials
Volume12
Issue number3
DOIs
StatePublished - 28 Jan 2019

Keywords

  • ALA
  • ALD
  • AlN
  • Buffer layers
  • MOCVD
  • Regrowth
  • Transition layer

Scopus subject areas

  • Materials Science(all)

Cite this

Seppänen, Heli ; Kim, Iurii ; Etula, Jarkko ; Ubyivovk, Evgeniy ; Bouravleuv, Alexei ; Lipsanen, Harri. / Aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition. In: Materials. 2019 ; Vol. 12, No. 3.
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abstract = "Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.",
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Aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition. / Seppänen, Heli; Kim, Iurii; Etula, Jarkko; Ubyivovk, Evgeniy; Bouravleuv, Alexei; Lipsanen, Harri.

In: Materials, Vol. 12, No. 3, 406, 28.01.2019.

Research output: Contribution to journalArticleResearchpeer-review

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AU - Seppänen, Heli

AU - Kim, Iurii

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AU - Bouravleuv, Alexei

AU - Lipsanen, Harri

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