A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires

Alexander A. Koryakin, Sergey A. Kukushkin, Konstantin P. Kotlyar, Evgenii D. Ubyivovk, Rodion R. Reznik, George E. Cirlin

Research output

Abstract

We propose a new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires during molecular beam epitaxy (MBE). The nanowire MBE growth was achieved at a temperature of 270 °C on both Si(111) and SiC/Si(111) substrates. A special procedure of substrate preparation was used to obtain a high yield of nanowires grown perpendicularly to the substrate. The morphology of the InAs nanowire array was studied by scanning electron microscopy (SEM) revealing a significantly higher percentage of vertical InAs nanowires compared with previous works. The structural properties of nanowires and the catalyst composition were investigated by analytical methods of transmission electron microscopy (TEM). A theoretical assessment of the growth of InAs nanowires in the frame of the classical nucleation theory has shown the possibility of vapor-solid-solid growth at extremely low temperature, e.g., at 270 °C. It was found that the presence of elastic stresses due to the lattice mismatch between the solid catalyst particle and the nanowire material influences the nanowire growth rate. This important feature of nucleation in solid in the case of vapor-solid-solid growth of III-V nanowires was investigated for the first time. Also, we have shown that the material transport of arsenic towards the interface between the catalyst particle and the nanowire top limits the nanowire growth rate. Further development of the low-temperature growth methods facilitates the integration of III-V semiconductors with silicon electronics.

Original languageEnglish
Pages (from-to)4707-4717
JournalCrystEngComm
Volume21
Issue number32
Early online date5 Jul 2019
DOIs
Publication statusPublished - 2019

Fingerprint

Nanowires
nanowires
Temperature
catalysts
Molecular beam epitaxy
Catalysts
indium arsenide
Nucleation
Substrates
molecular beam epitaxy
Vapors
nucleation
vapors
Lattice mismatch
Arsenic
Growth temperature
Silicon
arsenic
Structural properties
Electronic equipment

Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)

Cite this

Koryakin, A. A., Kukushkin, S. A., Kotlyar, K. P., Ubyivovk, E. D., Reznik, R. R., & Cirlin, G. E. (2019). A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires. CrystEngComm, 21(32), 4707-4717. https://doi.org/10.1039/c9ce00774a
Koryakin, Alexander A. ; Kukushkin, Sergey A. ; Kotlyar, Konstantin P. ; Ubyivovk, Evgenii D. ; Reznik, Rodion R. ; Cirlin, George E. / A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires. In: CrystEngComm. 2019 ; Vol. 21, No. 32. pp. 4707-4717.
@article{c7f259a131304899ba6e1faee69a2f83,
title = "A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires",
abstract = "We propose a new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires during molecular beam epitaxy (MBE). The nanowire MBE growth was achieved at a temperature of 270 °C on both Si(111) and SiC/Si(111) substrates. A special procedure of substrate preparation was used to obtain a high yield of nanowires grown perpendicularly to the substrate. The morphology of the InAs nanowire array was studied by scanning electron microscopy (SEM) revealing a significantly higher percentage of vertical InAs nanowires compared with previous works. The structural properties of nanowires and the catalyst composition were investigated by analytical methods of transmission electron microscopy (TEM). A theoretical assessment of the growth of InAs nanowires in the frame of the classical nucleation theory has shown the possibility of vapor-solid-solid growth at extremely low temperature, e.g., at 270 °C. It was found that the presence of elastic stresses due to the lattice mismatch between the solid catalyst particle and the nanowire material influences the nanowire growth rate. This important feature of nucleation in solid in the case of vapor-solid-solid growth of III-V nanowires was investigated for the first time. Also, we have shown that the material transport of arsenic towards the interface between the catalyst particle and the nanowire top limits the nanowire growth rate. Further development of the low-temperature growth methods facilitates the integration of III-V semiconductors with silicon electronics.",
keywords = "SURFACE, DIFFUSION, PHASE, DEPRESSION, CRYSTAL, EPITAXY, SYSTEM, SB",
author = "Koryakin, {Alexander A.} and Kukushkin, {Sergey A.} and Kotlyar, {Konstantin P.} and Ubyivovk, {Evgenii D.} and Reznik, {Rodion R.} and Cirlin, {George E.}",
year = "2019",
doi = "10.1039/c9ce00774a",
language = "English",
volume = "21",
pages = "4707--4717",
journal = "CrystEngComm",
issn = "1466-8033",
publisher = "Royal Society of Chemistry",
number = "32",

}

Koryakin, AA, Kukushkin, SA, Kotlyar, KP, Ubyivovk, ED, Reznik, RR & Cirlin, GE 2019, 'A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires', CrystEngComm, vol. 21, no. 32, pp. 4707-4717. https://doi.org/10.1039/c9ce00774a

A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires. / Koryakin, Alexander A.; Kukushkin, Sergey A.; Kotlyar, Konstantin P.; Ubyivovk, Evgenii D.; Reznik, Rodion R.; Cirlin, George E.

In: CrystEngComm, Vol. 21, No. 32, 2019, p. 4707-4717.

Research output

TY - JOUR

T1 - A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires

AU - Koryakin, Alexander A.

AU - Kukushkin, Sergey A.

AU - Kotlyar, Konstantin P.

AU - Ubyivovk, Evgenii D.

AU - Reznik, Rodion R.

AU - Cirlin, George E.

PY - 2019

Y1 - 2019

N2 - We propose a new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires during molecular beam epitaxy (MBE). The nanowire MBE growth was achieved at a temperature of 270 °C on both Si(111) and SiC/Si(111) substrates. A special procedure of substrate preparation was used to obtain a high yield of nanowires grown perpendicularly to the substrate. The morphology of the InAs nanowire array was studied by scanning electron microscopy (SEM) revealing a significantly higher percentage of vertical InAs nanowires compared with previous works. The structural properties of nanowires and the catalyst composition were investigated by analytical methods of transmission electron microscopy (TEM). A theoretical assessment of the growth of InAs nanowires in the frame of the classical nucleation theory has shown the possibility of vapor-solid-solid growth at extremely low temperature, e.g., at 270 °C. It was found that the presence of elastic stresses due to the lattice mismatch between the solid catalyst particle and the nanowire material influences the nanowire growth rate. This important feature of nucleation in solid in the case of vapor-solid-solid growth of III-V nanowires was investigated for the first time. Also, we have shown that the material transport of arsenic towards the interface between the catalyst particle and the nanowire top limits the nanowire growth rate. Further development of the low-temperature growth methods facilitates the integration of III-V semiconductors with silicon electronics.

AB - We propose a new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires during molecular beam epitaxy (MBE). The nanowire MBE growth was achieved at a temperature of 270 °C on both Si(111) and SiC/Si(111) substrates. A special procedure of substrate preparation was used to obtain a high yield of nanowires grown perpendicularly to the substrate. The morphology of the InAs nanowire array was studied by scanning electron microscopy (SEM) revealing a significantly higher percentage of vertical InAs nanowires compared with previous works. The structural properties of nanowires and the catalyst composition were investigated by analytical methods of transmission electron microscopy (TEM). A theoretical assessment of the growth of InAs nanowires in the frame of the classical nucleation theory has shown the possibility of vapor-solid-solid growth at extremely low temperature, e.g., at 270 °C. It was found that the presence of elastic stresses due to the lattice mismatch between the solid catalyst particle and the nanowire material influences the nanowire growth rate. This important feature of nucleation in solid in the case of vapor-solid-solid growth of III-V nanowires was investigated for the first time. Also, we have shown that the material transport of arsenic towards the interface between the catalyst particle and the nanowire top limits the nanowire growth rate. Further development of the low-temperature growth methods facilitates the integration of III-V semiconductors with silicon electronics.

KW - SURFACE

KW - DIFFUSION

KW - PHASE

KW - DEPRESSION

KW - CRYSTAL

KW - EPITAXY

KW - SYSTEM

KW - SB

UR - http://www.scopus.com/inward/record.url?scp=85070642367&partnerID=8YFLogxK

U2 - 10.1039/c9ce00774a

DO - 10.1039/c9ce00774a

M3 - Article

AN - SCOPUS:85070642367

VL - 21

SP - 4707

EP - 4717

JO - CrystEngComm

JF - CrystEngComm

SN - 1466-8033

IS - 32

ER -