A model for direct and inverse Hall-Petch relation for nanocrystalline ceramics

Alexander G. Sheinerman, Ricardo H.R. Castro, Mikhail Yu. Gutkin

Research output

Abstract

A model describing both direct and inverse Hall-Petch dependences observed in nanocrystalline ceramic MgAl2O4 spinel is proposed. Within the model, plastic deformation in nanocrystalline ceramics (NCCs) is realized via lattice dislocation slip combined with thermally activated grain boundary (GB) sliding. The model strongly suggests that the controlling parameter determining the type (direct or inverse) of the Hall-Petch dependence is the GB sliding activation energy. It is assumed that this quantity can be affected by the temperature regime of NCC synthesis and therefore rationalize conflicting data reported in the literature concerning the onset of the inverse Hall-Petch behavior in this system.

Original languageEnglish
Article number126886
JournalMaterials Letters
Volume260
Early online date28 Oct 2019
DOIs
Publication statusE-pub ahead of print - 28 Oct 2019

Fingerprint

Grain boundary sliding
ceramics
sliding
grain boundaries
plastic deformation
spinel
Plastic deformation
slip
Activation energy
activation energy
synthesis
Temperature
temperature
spinell

Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "A model describing both direct and inverse Hall-Petch dependences observed in nanocrystalline ceramic MgAl2O4 spinel is proposed. Within the model, plastic deformation in nanocrystalline ceramics (NCCs) is realized via lattice dislocation slip combined with thermally activated grain boundary (GB) sliding. The model strongly suggests that the controlling parameter determining the type (direct or inverse) of the Hall-Petch dependence is the GB sliding activation energy. It is assumed that this quantity can be affected by the temperature regime of NCC synthesis and therefore rationalize conflicting data reported in the literature concerning the onset of the inverse Hall-Petch behavior in this system.",
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A model for direct and inverse Hall-Petch relation for nanocrystalline ceramics. / Sheinerman, Alexander G.; Castro, Ricardo H.R.; Gutkin, Mikhail Yu.

In: Materials Letters, Vol. 260, 126886, 01.02.2020.

Research output

TY - JOUR

T1 - A model for direct and inverse Hall-Petch relation for nanocrystalline ceramics

AU - Sheinerman, Alexander G.

AU - Castro, Ricardo H.R.

AU - Gutkin, Mikhail Yu.

PY - 2019/10/28

Y1 - 2019/10/28

N2 - A model describing both direct and inverse Hall-Petch dependences observed in nanocrystalline ceramic MgAl2O4 spinel is proposed. Within the model, plastic deformation in nanocrystalline ceramics (NCCs) is realized via lattice dislocation slip combined with thermally activated grain boundary (GB) sliding. The model strongly suggests that the controlling parameter determining the type (direct or inverse) of the Hall-Petch dependence is the GB sliding activation energy. It is assumed that this quantity can be affected by the temperature regime of NCC synthesis and therefore rationalize conflicting data reported in the literature concerning the onset of the inverse Hall-Petch behavior in this system.

AB - A model describing both direct and inverse Hall-Petch dependences observed in nanocrystalline ceramic MgAl2O4 spinel is proposed. Within the model, plastic deformation in nanocrystalline ceramics (NCCs) is realized via lattice dislocation slip combined with thermally activated grain boundary (GB) sliding. The model strongly suggests that the controlling parameter determining the type (direct or inverse) of the Hall-Petch dependence is the GB sliding activation energy. It is assumed that this quantity can be affected by the temperature regime of NCC synthesis and therefore rationalize conflicting data reported in the literature concerning the onset of the inverse Hall-Petch behavior in this system.

KW - Ceramics

KW - Hall-Petch effect

KW - Hardness

KW - Micromechanical modeling

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JO - Materials Letters

JF - Materials Letters

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