Фотоэлектрические свойства слоев GaN, выращенных методом молекулярно-лучевой эпитаксии с плазменной активацией на подложках Si(111) и эпитаксиальных слоях SiC на Si(111).

С.А. Кукушкин, А.М. Мизеров, А.С. Гращенко, А.В. Осипов, Е.В. Никитина, С.Н. Тимошнев, А.Д. Буравлев

Research output: Contribution to journalArticle

Abstract

The photoelectric properties of GaN/SiC/Si(111) and GaN/Si(111) heterostructures grown by plasma-assisted molecular-beam epitaxy under the same growth conditions on identical silicon substrates, but with different buffer layers, are experimentally investigated. The GaN/SiC/Si(111) structure is formed on a Si substrate with the SiC buffer layer grown by a new atom-substitution technique and the GaN/Si(111) structure, on a Si substrate subjected to pre-epitaxial plasma nitridation. The significant effect of carbon-vacancy clusters contained in the SiC layer on the growth of the GaN layer and its optical and photoelectric properties is found. It is experimentally established that the GaN/SiC/Si(111) heterostructure has a higher photosensitivity than the GaN/Si(111) heterostructure. In the GaN/SiC/Si(111) heterostructure, the coexistence of two oppositely directed p – n junctions is observed. One p – n junction forms at the SiC/Si interface and the other, at the GaN/SiC interface. It is shown that the occurrence
Original languageRussian
Pages (from-to)190-198
JournalФИЗИКА И ТЕХНИКА ПОЛУПРОВОДНИКОВ
Volume53
Issue number2
StatePublished - 2019
Externally publishedYes

Cite this