Синтез гексагональных слоев AlN и GaN на Si(100)-подложке методом хлоридной газофазной эпитаксии.

В.Н. Бессолов, Е.В. Гущина, Е.В. Коненкова, С.Д. Коненков, Т.В. Львова, В.Н. Пантелеев, М.П. Щеглов

Research output: Contribution to journalArticle

Abstract

Synthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon surface, nucleation and growth of an AlN layer, and then formation of a GaN/AlN structure. It has been found that in the case of a (100)Si substrate, GaN nucleates on buffer AlN layers that may have two crystallographic orientations in contrast to a Si(111) substrate, on which a buffer layer may have only one orientation. It has been shown that the treatment of the Si(100) substrate in an aqueous solution of (NH_4)_2S decreases the FWHM of the rocking curve for GaN(0002) by a factor of 1.5.
Original languageRussian
Pages (from-to)574-577
JournalЖУРНАЛ ТЕХНИЧЕСКОЙ ФИЗИКИ
Volume89
Issue number4
StatePublished - 2019
Externally publishedYes

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